3LN01SS
Ordering number : EN6546B
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
3LN01SS
Features
•
Low ON-resistance
•
Ultrahigh-speed switching
•
2.5V drive
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
30
±10
0.15
0.6
DSS
V
V
GSS
I
A
D
Drain Current (Pulse)
I
PW 10 s, duty cycle 1%
A
≤
μ
≤
DP
Allowable Power Dissipation
Channel Temperature
Storage Temperature
P
0.15
150
W
°C
°C
D
Tch
Tstg
--55 to +150
This product is designed to “ESD immunity < 200V ”, so please take care when handling.
*
Machine Model
*
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: SSFP
7029A-003
• JEITA, JEDEC
: SC-81
•
Minimum Packing Quantity : 8,000 pcs./reel
1.4
3LN01SS-TL-E
3LN01SS-TL-H
0.1
0.25
Packing Type: TL
Marking
3
0 to 0.02
YA
1
2
2
TL
0.2
0.45
Electrical Connection
3
1
1 : Gate
2 : Source
3 : Drain
3
SANYO : SSFP
1
2
http://semicon.sanyo.com/en/network
62712 TKIM/32406PE MSIM TB-00002158/52200 TSIM TA-1986
No.6546-1/7