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3LN04MH

更新时间： 2024-01-16 03:59:26
品牌 Logo 应用领域
三洋 - SANYO 开关通用开关
页数 文件大小 规格书
4页 37K
描述
N-Channel Silicon MOSFET General-Purpose Switching Device

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3LN04MH 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-F3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.3
Is Samacsys：N配置：SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：0.35 A
最大漏极电流 (ID)：0.35 A最大漏源导通电阻：1 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：0.15 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

3LN04MH 数据手册

 浏览型号3LN04MH的Datasheet PDF文件第2页浏览型号3LN04MH的Datasheet PDF文件第3页浏览型号3LN04MH的Datasheet PDF文件第4页 
Ordering number : ENA0550  
SANYO Sem iconductors  
DATA S HEET  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
3LN04MH  
Features  
•
1.5V drive.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
30  
±10  
0.35  
1.4  
DSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
GSS  
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW≤10µs, duty cycle≤1%  
Mounted on a ceramic board (900mm2✕0.8mm)  
A
DP  
P
D
0.6  
W
°C  
°C  
Tch  
150  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0V  
30  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=30V, V =0V  
GS  
1
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±8V, V =0V  
DS  
±10  
V
(off)  
GS  
=10V, I =100µA  
0.4  
1.3  
D
Forward Transfer Admittance  
yfs  
=10V, I =200mA  
360  
600  
mS  
Ω
D
R
(on)1  
I
D
I
D
I
D
=200mA, V =4V  
GS  
0.75  
0.9  
1.0  
1.3  
3.6  
DS  
DS  
DS  
Static Drain-to-Source On-State Resistance  
R
R
(on)2  
(on)3  
=100mA, V =2.5V  
GS  
Ω
=10mA, V =1.5V  
GS  
1.8  
Ω
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Ciss  
V
V
V
=10V, f=1MHz  
=10V, f=1MHz  
=10V, f=1MHz  
28  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
DS  
DS  
DS  
Coss  
Crss  
6.0  
3.1  
t (on)  
d
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
17.5  
34.2  
104  
55.5  
t
r
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
t
f
Marking : FD  
Continued on next page.  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
N0806PE SY IM TC-00000232 No. A0550-1/4  
1234

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