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2STA2510 PDF预览

2STA2510

更新时间: 2024-11-24 02:57:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
7页 96K
描述
High power PNP epitaxial planar bipolar transistor

2STA2510 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-3P包装说明:ROHS COMPLIANT, TO-3P, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.81
最大集电极电流 (IC):25 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):125 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):20 MHzBase Number Matches:1

2STA2510 数据手册

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2STA2510  
High power PNP epitaxial planar bipolar transistor  
Features  
High breakdown voltage V  
= -100 V  
CEO  
Complementary to 2STC2510  
Fast-switching speed  
Typical f = 20 MHz  
t
o
Fully characterized at 125 C  
3
2
Applications  
1
TO-3P  
Audio power amplifier  
Description  
Figure 1. Internal schematic diagram  
The device is a PNP transistor manufactured  
using new BiT-LA (Bipolar transistor for linear  
amplifier) technology. The resulting transistor  
shows good gain linearity behaviour.  
Table 1.  
Order code  
2STA2510  
Device summary  
Marking  
Package  
Packaging  
2STA2510  
TO-3P  
Tube  
May 2008  
Rev 2  
1/7  
.
www.st.com  
A7  

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