Datasheet > 2STC4467

2STC4467

更新时间： 2024-11-20 02:57:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
7页	96K
描述
High power NPN epitaxial planar bipolar transistor

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2STC4467 数据手册

2STC4467

High power NPN epitaxial planar bipolar transistor

Features

■ High breakdown voltage V

= 120 V

CEO

■ Complementary to 2STA1694

■ Fast-switching speed

■ Typical f = 20 MHz

■ Fully characterized at 125 C

Applications

TO-3P

■ Audio power amplifier

Description

Figure 1. Internal schematic diagram

The device is a NPN transistor manufactured

using new BiT-LA (Bipolar transistor for linear

amplifier) technology. The resulting transistor

shows good gain linearity behaviour.

Table 1.

Order code

2STC4467

Device summary

Marking

Package

Packaging

2STC4467

TO-3P

Tube

April 2008

Rev 2

1/7

www.st.com

12 3 4 5 6 7

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