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2STC5948 PDF预览

2STC5948

更新时间: 2024-11-24 02:57:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
8页 161K
描述
High power NPN epitaxial planar bipolar transistor

2STC5948 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-3P
包装说明:ROHS COMPLIANT, TO-3P, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.82最大集电极电流 (IC):17 A
集电极-发射极最大电压:250 V配置:SINGLE
最小直流电流增益 (hFE):35JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):200 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):25 MHz

2STC5948 数据手册

 浏览型号2STC5948的Datasheet PDF文件第2页浏览型号2STC5948的Datasheet PDF文件第3页浏览型号2STC5948的Datasheet PDF文件第4页浏览型号2STC5948的Datasheet PDF文件第5页浏览型号2STC5948的Datasheet PDF文件第6页浏览型号2STC5948的Datasheet PDF文件第7页 
2STC5948  
High power NPN epitaxial planar bipolar transistor  
Features  
High breakdown voltage V  
= 250 V  
CEO  
Complementary to 2STA2120  
Fast-switching speed  
Typical f = 25 MHz  
t
o
Fully characterized at 125 C  
3
2
Applications  
1
TO-3P  
Audio power amplifier  
Description  
Figure 1. Internal schematic diagram  
The device is a NPN transistor manufactured  
using new BiT-LA (Bipolar transistor for linear  
amplifier) technology. The resulting transistor  
shows good gain linearity behaviour.  
Table 1.  
Order code  
2STC5948  
Device summary  
Marking  
Package  
Packaging  
2STC5948  
TO-3P  
Tube  
May 2008  
Rev 2  
1/8  
www.st.com  
8

2STC5948 替代型号

型号 品牌 替代类型 描述 数据表
2SC5242OTU FAIRCHILD

功能相似

NPN Epitaxial Silicon Transistor

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