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2SC5242OTU PDF预览

2SC5242OTU

更新时间: 2024-10-30 02:57:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
6页 471K
描述
NPN Epitaxial Silicon Transistor

2SC5242OTU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-3PN
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.33
最大集电极电流 (IC):17 A集电极-发射极最大电压:250 V
配置:SINGLE最小直流电流增益 (hFE):80
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):130 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):30 MHzBase Number Matches:1

2SC5242OTU 数据手册

 浏览型号2SC5242OTU的Datasheet PDF文件第2页浏览型号2SC5242OTU的Datasheet PDF文件第3页浏览型号2SC5242OTU的Datasheet PDF文件第4页浏览型号2SC5242OTU的Datasheet PDF文件第5页浏览型号2SC5242OTU的Datasheet PDF文件第6页 
July 2008  
2SC5242/FJA4313  
NPN Epitaxial Silicon Transistor  
Applications  
High-Fidelity Audio Output Amplifier  
General Purpose Power Amplifier  
Features  
High Current Capability: IC = 15A  
High Power Dissipation : 130watts  
High Frequency : 30MHz.  
TO-3P  
1.Base 2.Collector 3.Emitter  
1
High Voltage : VCEO=230V  
Wide S.O.A for reliable operation.  
Excellent Gain Linearity for low THD.  
Complement to 2SA1962/FJA4213.  
Thermal and electrical Spice models are available  
Same transistor is also available in:  
--TO264 package, 2SC5200/FJL4315 : 150 watts  
--TO220 package, FJP5200 : 80 watts  
--TO220F package, FJPF5200 : 50 watts  
Absolute Maximum Ratings*  
T = 25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
Units  
BVCBO  
BVCEO  
BVEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current(DC)  
Base Current  
230  
230  
5
V
V
V
A
A
15  
IB  
1.5  
PD  
Total Device Dissipation(TC=25°C)  
Derate above 25°C  
130  
1.04  
W
W/°C  
TJ, TSTG  
Junction and Storage Temperature  
- 50 ~ +150  
°C  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics* T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Max.  
Units  
RθJC  
Thermal Resistance, Junction to Case  
0.96  
°C/W  
* Device mounted on minimum pad size  
h
Classification  
FE  
Classification  
R
O
hFE1  
55 ~ 110  
80 ~ 160  
© 2008 Fairchild Semiconductor Corporation  
2SC5242/FJA4313 Rev. A3  
www.fairchildsemi.com  
1

2SC5242OTU 替代型号

型号 品牌 替代类型 描述 数据表
2SC5242OTU ONSEMI

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NPN外延硅晶体管
2STC5242 STMICROELECTRONICS

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High power NPN epitaxial planar bipolar transistor

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