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2STBN15D100 PDF预览

2STBN15D100

更新时间: 2024-11-24 12:55:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管达林顿晶体管
页数 文件大小 规格书
7页 109K
描述
Low voltage NPN power Darlington transistor

2STBN15D100 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:D2PAK包装说明:ROHS COMPLIANT, TO-263, D2PAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:8 weeks
风险等级:1.25其他特性:BUILT-IN BIAS RESISTOR
外壳连接:COLLECTOR最大集电极电流 (IC):12 A
集电极-发射极最大电压:100 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):750JEDEC-95代码:TO-263AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
极性/信道类型:NPN最大功率耗散 (Abs):70 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2STBN15D100 数据手册

 浏览型号2STBN15D100的Datasheet PDF文件第2页浏览型号2STBN15D100的Datasheet PDF文件第3页浏览型号2STBN15D100的Datasheet PDF文件第4页浏览型号2STBN15D100的Datasheet PDF文件第5页浏览型号2STBN15D100的Datasheet PDF文件第6页浏览型号2STBN15D100的Datasheet PDF文件第7页 
2STBN15D100  
Low voltage NPN power Darlington transistor  
Features  
Good h linearity  
FE  
High f frequency  
T
TAB  
Monolithic Darlington configuration with  
integrated antiparallel collector-emitter diode  
3
Application  
1
Linear and switching industrial equipment  
PAK  
Description  
The device is manufactured in planar technology  
with “base island” layout and monolithic  
Darlington configuration.  
Figure 1.  
Internal schematic diagrams  
R = 8 kΩ  
1
R = 150 Ω  
2
Table 1.  
Order code  
2STBN15D100T4  
Device summary  
Marking  
Package  
Packaging  
BN15D100  
PAK  
Tape and reel  
January 2010  
Doc ID 16117 Rev 2  
1/7  
www.st.com  
7
 

2STBN15D100 替代型号

型号 品牌 替代类型 描述 数据表
2STBN15D100T4 STMICROELECTRONICS

完全替代

Low voltage NPN power Darlington transistor

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