生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
Is Samacsys: | N | 其他特性: | LOGIC LEVEL COMPATIBLE |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 1 A |
最大漏源导通电阻: | 5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 10 W |
最大脉冲漏极电流 (IDM): | 3 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK611-Z-T1 | NEC |
获取价格 |
Power Field-Effect Transistor, 1A I(D), 100V, 5ohm, 1-Element, N-Channel, Silicon, Metal-o | |
2SK611-Z-T2 | NEC |
获取价格 |
Power Field-Effect Transistor, 1A I(D), 100V, 5ohm, 1-Element, N-Channel, Silicon, Metal-o | |
2SK612 | ETC |
获取价格 |
MOS Field Effect Power Transistors | |
2SK612Z | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 2A I(D) | TO-252 | |
2SK612-Z | NEC |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 100V, 0.45ohm, 1-Element, N-Channel, Silicon, Meta | |
2SK612-Z-T1 | NEC |
获取价格 |
Power Field-Effect Transistor, 2A I(D), 100V, 0.45ohm, 1-Element, N-Channel, Silicon, Meta | |
2SK613-2 | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 13MA I(DSS) | TO-236 | |
2SK613-3 | ETC |
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TRANSISTOR | JFET | N-CHANNEL | 19MA I(DSS) | TO-236 | |
2SK613-4 | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 27MA I(DSS) | TO-236 | |
2SK614 | PANASONIC |
获取价格 |
For switching |