生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 20 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 120 W | 子类别: | FET General Purpose Power |
表面贴装: | NO | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK624 | NSC |
获取价格 |
Si N-Channel Junction |
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2SK630 | ISC |
获取价格 |
Drain Current âID=5A@ TC=25C |
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2SK631 | ISC |
获取价格 |
Drain Current âID=10A@ TC=25C |
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2SK632 | ISC |
获取价格 |
Drain Current âID=5A@ TC=25C |
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2SK633 | ISC |
获取价格 |
Drain Current âID=10A@ TC=25C |
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2SK634 | ISC |
获取价格 |
Drain Current âID=10A@ TC=25C |
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2SK635 | ISC |
获取价格 |
Drain Current âID=3A@ TC=25C |
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2SK636 | ISC |
获取价格 |
Drain Current âID=8A@ TC=25C |
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2SK637 | ISC |
获取价格 |
Drain Current âID=10A@ TC=25C |
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2SK641 | ETC |
获取价格 |
SILICON N-CHANNEL MOS FET |
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