Datasheet > 2SK635

2SK635

更新时间： 2024-01-26 23:44:11

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
2页	64K
描述
Drain Current âID=3A@ TC=25C

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK635 数据手册

INCHANGE Semiconductor

isc Product Specification

isc N-Channel MOSFET Transistor

2SK634

FEATURES

·Drain Current –I_D=10A@ T_C=25℃

·Drain Source Voltage-

: V_DSS= 400V(Min)

DESCRIPTION

·Designed for high voltage, high speed power switching

applications such as switching regulators, converters,

solenoid and relay drivers.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_DSS

V_GS

I_D

PARAMETER

VALUE

400

UNIT

Drain-Source Voltage

Gate-Source Voltage-Continuous

Drain Current-Continuous

±20

P_D

Total Dissipation @T_C=25℃

Max. Operating Junction Temperature

Storage Temperature

150

℃

T_J

-55~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

1.25

62.5

UNIT

R_{th j-c}

℃/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

R_{th j-a}

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

PDF pdfFactory Pro

www.fineprint.cn

中文翻译

下载PDF

与2SK635相关器件

型号	品牌	获取价格	描述	数据表
2SK636	ISC	获取价格	Drain Current âID=8A@ TC=25C
2SK637	ISC	获取价格	Drain Current âID=10A@ TC=25C
2SK641	ETC	获取价格	SILICON N-CHANNEL MOS FET
2SK642	ETC	获取价格	SILICON N-CHANNEL MOS FET
2SK643	TOSHIBA	获取价格	2SK643
2SK644	TOSHIBA	获取价格	TRANSISTOR 10 A, 450 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
2SK646	HITACHI	获取价格	SILICON N-CHANNEL MOS FET
2SK649X	PANASONIC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, M
2SK65	PANASONIC	获取价格	For Impedance Conversion In Low Frequency
2SK654	NEC	获取价格	FAST SWITCHING N-CHANNEL SILICON POWER MOSFET