Datasheet > 2SK636

2SK636

更新时间： 2022-02-26 13:52:39

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
2页	64K
描述
Drain Current âID=8A@ TC=25C

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数据手册

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2SK636 数据手册

INCHANGE Semiconductor

isc Product Specification

isc N-Channel MOSFET Transistor

2SK632

FEATURES

·Drain Current –I_D=5A@ T_C=25℃

·Drain Source Voltage-

: V_DSS= 200V(Min)

DESCRIPTION

·Designed for high voltage, high speed power switching

applications such as switching regulators, converters,

solenoid and relay drivers.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_DSS

V_GS

I_D

PARAMETER

VALUE

200

UNIT

Drain-Source Voltage

Gate-Source Voltage-Continuous

Drain Current-Continuous

±20

P_D

Total Dissipation @T_C=25℃

Max. Operating Junction Temperature

Storage Temperature

150

℃

T_J

-55~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

1.25

62.5

UNIT

R_{th j-c}

℃/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

R_{th j-a}

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