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2SK4092-A

更新时间: 2024-11-16 03:56:43
品牌 Logo 应用领域
日电电子 - NEC 开关
页数 文件大小 规格书
8页 192K
描述
SWITCHING N-CHANNEL POWER MOS FET

2SK4092-A 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK4092  
SWITCHING  
N-CHANNEL POWER MOS FET  
DESCRIPTION  
The 2SK4092 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, and  
designed for high voltage applications such as switching power supply, AC adapter.  
FEATURES  
Low on-state resistance  
RDS(on) = 0.4 Ω MAX. (VGS = 10 V, ID = 10 A)  
Low gate charge  
QG = 50 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 21 A)  
Gate voltage rating: 30 V  
Avalanche capability ratings  
ORDERING INFORMATION  
PART NUMBER  
2SK4092-A Note  
LEAD PLATING  
PACKING  
PACKAGE  
Sn-Ag-Cu  
100 p/package  
TO-3P (MP-88) typ. 5.0 g  
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)  
(TO-3P)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
600  
V
V
30  
21  
A
60  
A
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation (TA = 25°C)  
Channel Temperature  
200  
W
W
°C  
°C  
A
PT2  
3
150  
Tch  
Storage Temperature  
Tstg  
55 to +150  
21  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
29.4  
mJ  
Notes 1. PW 10 μs, Duty Cycle 1%  
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 0 V  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D18776EJ1V0DS00 (1st edition)  
Date Published May 2007 NS  
Printed in Japan  
2007  

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TRANSISTOR 6 A, 600 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220F-3FS, 3 PIN