Datasheet > 2SK371-V

2SK371-V

更新时间： 2024-09-18 08:49:47

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	758K
描述
TRANSISTOR 30 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Signal

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2SK371-V 数据手册

2SK371

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK371

For Low Noise Audio Amplifier Applications

Unit: mm

•

Suitable for use as first stage for equalizer and MC head amplifiers.

High |Y |: |Y | = 40 mS (typ.) (V = 10 V, V = 0, I = 5 mA)

DSS

High breakdown voltage: V

= −40 V

GDS

Super low noise: NF = 1.0dB (typ.)

= 10 V, I = 0.5 mA, f = 1 kHz, R = 100 Ω)

•

High input impedance: I

Small package

= −1 nA (max) (V

= −30 V)

GSS

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Gate-drain voltage

Symbol

Rating

Unit

−40

GDS

Gate current

°C

Drain power dissipation

Junction temperature

Storage temperature range

200

125

stg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-4E1C

Weight: 0.13 g (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate cut-off current

Symbol

Test Condition

Min

Typ.

Max

Unit

= −30 V, V

= 0

⎯

−1.0

GSS

Gate-drain breakdown voltage

= 0, I = −100 μA

−40

⎯

(BR) GDS

DSS

Drain current

= 10 V, V

= 0

5.0

⎯

(Note 1)

Gate-source cut-off voltage

Forward transfer admittance

= 10 V, I = 0.1 μA

−0.3

⎯

−1.2

GS (OFF)

= 10 V, V

= 0, f = 1 kHz,

= 5 mA)

⎪Y ⎪

⎯

(typ.: I

DSS

Input capacitance

= 10 V, V

= 0, f = 1 MHz

⎯

iss

Reverse transfer capacitance

= 10 V, I = 0, f = 1 MHz

rss

= 10 V, R = 100 Ω, I = 5 mA,

NF (1)

NF (2)

⎯

f = 100 Hz

Noise figure

(Note 2)

= 10 V, R = 100 Ω, I = 5 mA,

f = 1 kHz

Note 1:

classification GR: 5.0~10.0 mA, BL: 8.0~16.0 mA, V: 14.0~30.0 mA

DSS

Note 2: Use this in the low voltage region (V

< 15 V) for low noise applications.

2007-11-01

12 3 4 5

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与2SK371-V相关器件

型号	品牌	获取价格	描述	数据表
2SK372	TOSHIBA	获取价格	N CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER, ANALOG SWITCH, CONSTANT CURRENT AND IMPEDANC
2SK372_07	TOSHIBA	获取价格	Silicon N Channel Junction Type For Audio Amplifier, Analog-Switch, Constant-Current and I
2SK3720	SANYO	获取价格	FM Tuner, VHF-Band Amplifier Applications
2SK3720-5	ONSEMI	获取价格	Small Signal Field-Effect Transistor, 0.03A I(D), 15V, 1-Element, N-Channel, Silicon, Meta
2SK3720-5-TB-E	SANYO	获取价格	FM Tuner, VHF-Band Amplifier Applications
2SK3720-6	ONSEMI	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,15V V(BR)DSS,30MA I(D),SOT-23
2SK3723	TYSEMI	获取价格	Low on-resistance, low Qg High avalanche resistance For high-speed switching
2SK3723	KEXIN	获取价格	N-channel Enhancement Mode MOSFET
2SK3724	SANKEN	获取价格	Power Field-Effect Transistor, 80A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Meta
2SK3725-01	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET

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