生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | compliant | 风险等级: | 5.74 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 0.03 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.2 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3720-5-TB-E | SANYO |
获取价格 |
FM Tuner, VHF-Band Amplifier Applications | |
2SK3720-6 | ONSEMI |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,15V V(BR)DSS,30MA I(D),SOT-23 | |
2SK3723 | TYSEMI |
获取价格 |
Low on-resistance, low Qg High avalanche resistance For high-speed switching | |
2SK3723 | KEXIN |
获取价格 |
N-channel Enhancement Mode MOSFET | |
2SK3724 | SANKEN |
获取价格 |
Power Field-Effect Transistor, 80A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Meta | |
2SK3725-01 | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3726-01MR | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3727-01 | FUJI |
获取价格 |
N-CHANNEL SILICON POWER MOSFET | |
2SK3728-01MR | FUJI |
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N-CHANNEL SILICON POWER MOSFET | |
2SK372BL | ETC |
获取价格 |
TRANSISTOR | JFET | N-CHANNEL | 8MA I(DSS) | SPAK |