Datasheet > 2SK372-GR

2SK372-GR

更新时间： 2024-11-21 20:10:51

品牌	Logo	应用领域
东芝 - TOSHIBA		开关晶体管
页数	文件大小	规格书
5页	697K
描述
TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-4E1C, 3 PIN, FET General Purpose Small Signal

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技术参数
数据手册

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2SK372-GR 技术参数

生命周期：	Obsolete	包装说明：	2-4E1C, 3 PIN
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.66	配置：	SINGLE
FET 技术：	JUNCTION	JESD-30 代码：	R-PSIP-T3
元件数量：	1	端子数量：	3
工作模式：	DEPLETION MODE	最高工作温度：	125 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	IN-LINE	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

2SK372-GR 数据手册

2SK372

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK372

For Audio Amplifier, Analog-Switch, Constant-Current

and Impedance Converter Applications

Unit: mm

•

High breakdown voltage: V

= −40 V

GDS

High input impedance: I

= −1.0 nA (max) (V

= −30 V)

GSS

Low R

: R

= 20 Ω (typ.) (I

= 15 mA)

DS (ON) DS (ON)

DSS

Small package

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Gate-drain voltage

Symbol

Rating

Unit

−40

GDS

Gate current

°C

Drain power dissipation

Junction temperature

Storage temperature range

200

125

stg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-4E1C

Weight: 0.13 g (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate cut-off current

Symbol

Test Condition

Min

Typ.

Max

Unit

= −30 V, V

= 0

⎯

−1.0

GSS

Gate-drain breakdown voltage

= 0, I = −100 μA

−40

⎯

(BR) GDS

DSS

Drain current

= 10 V, V

= 0

5.0

⎯

(Note 1)

Gate-source cut-off voltage

Forward transfer admittance

Input capacitance

= 10 V, I = 0.1 μA

−0.3

⎯

−1.2

⎯

GS (OFF)

⎪Y ⎪

= 10 V, V

= 0, f = 1 kHz (Note 2)

= 0, f = 1 MHz

⎯

iss

rss

Reverse transfer capacitance

Drain-source ON resistance

= 10 V, I = 0, f = 1 MHz

⎯

= 10 mV, V

= 0

(Note 2)

⎯

DS (ON)

Note 1:

classification GR: 5.0~10.0 mA, BL: 8.0~16.0 mA, V: 14.0~30.0 mA

DSS

Note 2: Typical I

rating = 15 mA

DSS

2007-11-01

12 3 4 5

中文翻译

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与2SK372-GR相关器件

型号	品牌	获取价格	描述	数据表
2SK372-V	TOSHIBA	获取价格	暂无描述
2SK372Y	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 14MA I(DSS) \| SPAK
2SK372-Y	TOSHIBA	获取价格	暂无描述
2SK373	TOSHIBA	获取价格	N CHANNEL JUNCTION TYPE (FOR AUDIO, HIGH VOLTAGE AMPLIFIER AND CONSTANT CURRENT APPLICATIO
2SK373_07	TOSHIBA	获取价格	Silicon N Channel Junction Type For Audio, High Voltage Amplifier and Constant Current App
2SK3730-01MR	FUJI	获取价格	Power Field-Effect Transistor
2SK3731	KEXIN	获取价格	N-channel enhancement mode MOSFET
2SK3731	TYSEMI	获取价格	Low on-resistance, low Qg High avalanche resistance For high-speed switching
2SK3736	RENESAS	获取价格	Silicon N Channel MOS FET Power Switching
2SK3736-E	RENESAS	获取价格	Nch Single Power MOSFET 250V 6A 700mohm TO-220AB

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