2SK3582TK

更新时间： 2024-01-27 12:56:34

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体小信号场效应晶体管光电二极管
页数	文件大小	规格书
5页	122K
描述
Field Effect Transistor Silicon N Channel Junction Type For ECM

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SK3582TK 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	LEAD FREE, 2-1H1A, VESM2, 3 PIN	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.26
Is Samacsys：	N	配置：	SINGLE WITH BUILT-IN DIODE AND RESISTOR
最大漏极电流 (ID)：	0.00034 A	FET 技术：	JUNCTION
JESD-30 代码：	R-PDSO-F3	元件数量：	1
端子数量：	3	工作模式：	DEPLETION MODE
最高工作温度：	125 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	晶体管元件材料：	SILICON
Base Number Matches：	1

2SK3582TK 数据手册

2SK3582TK

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

2SK3582TK

For ECM

Unit: mm

•

Application for Ultra-compact ECM

1.2±0.05

0.8±0.05

Absolute Maximum Ratings (Ta=25°C)

Characteristic

Gate-Drain voltage

Symbol

Rating

Unit

-20

GDO

Gate Current

°C

Drain power dissipation (Ta = 25°C)

Junction Temperature

100

125

Storage temperature range

−55~125

°C

stg

1.Drain

2.Source

3.Gate

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

TESM3

JEDEC

JEITA

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

TOSHIBA

2-1R1A

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Weight: 2.2mg (typ.)

IDSS CLASSIFICATION

A-Rank

B-Rank

80 to 200 µA

170 to 300µA

Marking

Equivalent Circuit

Type Name

IDSS Classification Symbol

A :A-Rank

B :B-Rank

2007-11-01

12 3 4 5

中文翻译

下载PDF

与2SK3582TK相关器件

型号	品牌	获取价格	描述	数据表
2SK3582TK-A	TOSHIBA	获取价格	TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1R1A, TESM3, 3 PIN, FE
2SK3582TK-B	TOSHIBA	获取价格	TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, LEAD FREE, 2-1R1A, TESM3, 3 PIN, FE
2SK3582TV	TOSHIBA	获取价格	Silicon N Channel Junction Type For ECM
2SK3582TV-A	TOSHIBA	获取价格	TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1H1A, VESM2, 3 PIN, FET General P
2SK3582TV-B	TOSHIBA	获取价格	TRANSISTOR 0.34 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, 2-1H1A, VESM2, 3 PIN, FET General P
2SK3585G	PANASONIC	获取价格	Small Signal Field-Effect Transistor, 0.00046A I(D), 1-Element, N-Channel, Silicon, Juncti
2SK3586	FUJI	获取价格	N CHANNEL SILICON POWER MOSFET
2SK3586-01	FUJI	获取价格	N CHANNEL SILICON POWER MOSFET
2SK3586-01_03	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET
2SK3587-01MR	FUJI	获取价格	N-CHANNEL SILICON POWER MOSFET