是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-263 |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.3 |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (Abs) (ID): | 83 A |
最大漏极电流 (ID): | 83 A | 最大漏源导通电阻: | 0.006 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263 |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e6 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 105 W |
最大脉冲漏极电流 (IDM): | 332 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | TIN BISMUTH | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3573-ZK-E1-AY | RENESAS |
获取价格 |
2SK3573-ZK-E1-AY | |
2SK3574 | NEC |
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SWITCHING N-CHANNEL POWER MOSFET | |
2SK3574 | KEXIN |
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MOS Field Effect Transistor | |
2SK3574 | TYSEMI |
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4.5V drive available. Low on-state resistance,RDS(on)1 = 13.5m MAX Low gate charge | |
2SK3574-AZ | RENESAS |
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TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,48A I(D),TO-220AB | |
2SK3574-S | NEC |
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SWITCHING N-CHANNEL POWER MOSFET | |
2SK3574-Z | NEC |
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SWITCHING N-CHANNEL POWER MOSFET | |
2SK3574-Z | RENESAS |
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Power Field-Effect Transistor, 48A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Me | |
2SK3574-ZK | RENESAS |
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Power Field-Effect Transistor, 48A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Me | |
2SK3574-ZK | NEC |
获取价格 |
SWITCHING N-CHANNEL POWER MOSFET |