Datasheet > 2SK3574-AZ

2SK3574-AZ

更新时间： 2024-01-21 16:20:09

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
8页	86K
描述
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,48A I(D),TO-220AB

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2SK3574-AZ 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	48 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	29 W
子类别：	FET General Purpose Power	表面贴装：	NO
Base Number Matches：	1

2SK3574-AZ 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3574

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

★ ORDERING INFORMATION

The 2SK3574 is N-channel MOS FET device that

features a low on-state resistance and excellent switching

characteristics, designed for low voltage high current

applications such as DC/DC converter with synchronous

rectifier.

PART NUMBER

2SK3574

PACKAGE

TO-220AB

2SK3574-S

2SK3574-ZK

2SK3574-Z

TO-262

TO-263

TO-220SMD^Note

FEATURES

Note TO-220SMD package is produced only in Japan.

•4.5V drive available

•Low on-state resistance

R^DS(on)1= 13.5 mΩ MAX. (V^GS= 10 V, I^D= 24 A)

•Low gate charge

Q^G= 22 nC TYP. (V^DD= 24 V, V^GS= 10 V, I^D= 48 A)

•Built-in gate protection diode

•Avalanche capability ratings

•Surface mount device available

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^C= 25°C)

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T1

±20

±48

Note1

±140

1.5

Drain Current (pulse)

Total Power Dissipation (T^A= 25°C)

Total Power Dissipation (T^C= 25°C)

Channel Temperature

°C

P^T2

Tch

150

Storage Temperature

Tstg

–55 to +150

Note2

I^AS

Single Avalanche Current

Note2

E^AS

Single Avalanche Energy

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Starting T^ch= 25°C, V^DD= 15 V, R^G= 25 Ω, V^GS= 20 → 0 V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16260EJ2V0DS00 (2nd edition)

Date Published September 2002 NS CP(K)

Printed in Japan

The mark ! shows major revised points.

2002

12 3 4 5 6 7 8

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与2SK3574-AZ相关器件

型号	品牌	描述	获取价格	数据表
2SK3574-S	NEC	SWITCHING N-CHANNEL POWER MOSFET	获取价格
2SK3574-Z	NEC	SWITCHING N-CHANNEL POWER MOSFET	获取价格
2SK3574-Z	RENESAS	Power Field-Effect Transistor, 48A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Me	获取价格
2SK3574-ZK	RENESAS	Power Field-Effect Transistor, 48A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Me	获取价格
2SK3574-ZK	NEC	SWITCHING N-CHANNEL POWER MOSFET	获取价格
2SK3574-ZK-AZ	RENESAS	Power Field-Effect Transistor, 48A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Me	获取价格