Datasheet > 2SK3484

2SK3484

更新时间： 2024-11-12 07:32:35

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关
页数	文件大小	规格书
1页	47K
描述
MOS Field Effect Transistor

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中文翻译

获取价格

数据手册

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2SK3484 数据手册

SMD Type

MOSFICET

MOS Field Effect Transistor

2SK3484

TO-252

Unit: mm

Features

+0.15

-0.15

+0.1

2.30

-0.1

6.50

+0.2

5.30

-0.2

+0.8

0.50

-0.7

Super low on-state resistance:

R^DS(on)1= 125m MAX. (VGS = 10 V, ID = 8A)

R^DS(on)2= 148m MAX. (VGS = 4.5 V, ID = 8A)

Low Ciss: Ciss = 900 pF TYP.

0.127

max

+0.1

0.80

-0.1

+0.1

0.60

-0.1

2.3

4.60

1 Gate

+0.15

-0.15

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

100

Gate to source voltage

Drain current

I^dp*

Power dissipation

TC=25

T^A=25

P^D

1.0

Channel temperature

Storage temperature

T^ch

150

Tstg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gat cutoff voltage

Symbol

I^DSS

I^GSS

V^GS(off)

Yfs

Testconditons

Min

Typ

Max

Unit

VDS=100V,VGS=0

VGS= 20V,VDS=0

VDS=10V,ID=1mA

VDS=10V,ID=8A

VGS=10V,ID=8A

VGS=4.5V,ID=8A

1.5

4.5

2.0

9.5

100

110

900

110

2.5

Forward transfer admittance

R^DS(on)1

RDS(on)2

Ciss

125

148

Drain to source on-state resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

V^DS=10V,VGS=0,f=1MHZ

C^oss

C^rss

t^on

9.0

5.0

t^r

I^D=8A,VGS(on)=10V,RG=0 ,VDD=50V

Turn-off delay time

Fall time

t^off

4.0

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Q^G

I^D=16A, VDD =80V, VGS = 10 V

Q^GS

Q^GD

3.0

5.0

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