2SK3499
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3499
Switching Regulator and DC-DC Converter Applications
Unit: mm
Motor Drive Applications
•
•
•
•
Low drain-source ON resistance: R
= 0.4 Ω (typ.)
DS (ON)
High forward transfer admittance: |Y | = 8.0 S (typ.)
fs
Low leakage current: I
= 100 μA (max) (V
= 400 V)
DSS
DS
Enhancement model: V = 2.0 to 4.0 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Symbol
Rating
Unit
V
400
400
±30
10
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
GSS
DC (Note 1)
Pulse (Note 1)
I
D
Drain current
A
I
40
DP
Drain power dissipation (Tc = 25°C)
P
80
W
D
AS
AR
JEDEC
JEITA
―
Single pulse avalanche energy
E
360
mJ
(Note 2)
SC-97
2-9F1B
Avalanche current
I
10
8
A
TOSHIBA
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
Weight: 0.74 g (typ.)
T
150
ch
Storage temperature range
T
stg
−55 to150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Circuit Configuration
Thermal Characteristics
4
Characteristics
Symbol
Max
1.56
Unit
Thermal resistance, channel to case
R
°C/W
th (ch-c)
1
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: = 90 V, T = 25°C (initial), L = 5.85 mH, R = 25 Ω, I
V
DD
= 10 A
AR
ch
G
3
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2006-11-06