Datasheet > 2SK3507

2SK3507

更新时间： 2024-09-24 06:23:35

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关
页数	文件大小	规格书
1页	47K
描述
MOS Field Effect Transistor

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中文翻译

获取价格

数据手册

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2SK3507 数据手册

SMD Type

MOSFICET

MOS Field Effect Transistor

2SK3507

TO-252

Features

Unit: mm

+0.15

-0.15

+0.1

2.30

-0.1

6.50

4.5 V drive available

+0.2

5.30

-0.2

+0.8

0.50

-0.7

Low on-state resistance

R^DS(on)1= 45 m MAX. (VGS = 10 V, ID = 11 A)

Low gate charge

0.127

max

+0.1

0.80

-0.1

QG = 8.5 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 22 A)

Built-in G-S protection diode

Surface mount package available

+0.1

0.60

-0.1

2.3

4.60

1 Gate

+0.15

-0.15

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

Gate to source voltage

Drain current

I^dp*

Power dissipation

T^C=25

T^A=25

P^D

1.5

Channel temperature

Storage temperature

T^ch

150

Tstg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gate cutoff voltage

Symbol

I^DSS

I^GSS

V^GS(off)

Yfs

Testconditons

Min

Typ

Max

Unit

VDS=30V,VGS=0

VGS= 16V,VDS=0

VDS=10V,ID=1mA

VDS=4.0V,ID=11A

VGS=10V,ID=11A

VGS=4.5V,ID=11A

1.5

2.5

Forward transfer admittance

R^DS(on)1

RDS(on)2

Ciss

Drain to source on-state resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

360

125

V^DS=10V,VGS=0,f=1MHZ

C^oss

C^rss

ton

6.6

3.6

t^r

I^D=11A,VGS(on)=10V,RL=10 ,VDD=15V

Turn-off delay time

Fall time

t^off

5.3

8.5

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Q^G

I^D=22A, VDD =24V, VGS = 10 V

Q^GS

Q^GD

2.1

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与2SK3507相关器件

型号	品牌	获取价格	描述	数据表
2SK3507-Z	RENESAS	获取价格	22000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252, TO-252, 3 PIN
2SK3507-ZK	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
2SK351	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 5A I(D) \| TO-3
2SK3510	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
2SK3510	KEXIN	获取价格	MOS Field Effect Transistor
2SK3510	TYSEMI	获取价格	Super low on-state resistance: RDS(on) = 8.5 m MAX Built-in gate protection diode
2SK3510-S	NEC	获取价格	SWITCHING N-CHANNEL POWER MOSFET
2SK3510-S-AZ	NEC	获取价格	暂无描述
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2SK3510-Z-AZ	RENESAS	获取价格	83A, 75V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, MP-25Z, TO-220SMD, 3 PIN