Datasheet > 2SK3494

2SK3494

更新时间： 2024-09-24 07:32:35

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科信 - KEXIN		/
页数	文件大小	规格书
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描述
N-Channel Enhancement Mode MOSFET

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中文翻译

获取价格

数据手册

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2SK3494 数据手册

SMD Type

MOSFET

N-Channel Enhancement Mode MOSFET

2SK3494

TO-263

Unit: mm

+0.2

4.57

-0.2

+0.1

1.27

-0.1

Features

Low on-resistance, low Qg

High avalanche resistance

+0.1

-0.1

0.1max

1.27

+0.1

0.81

-0.1

2.54

1 Gate

+0.2

2.54

-0.2

+0.1

5.08

-0.1

+0.2

0.4

-0.2

2 Drain

3 Source

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

Unit

250

Gate to source voltage

Drain current

I^dp*

Power dissipation

T^C=25

T^A=25

P^D

1.4

Channel temperature

Storage temperature

T^ch

150

Tstg

-55 to +150

* PW 10 s,Duty Cycle 1%

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Gate leakage current

Gate threshold voltage

Forward transfer admittance

Drain to source on-state resistance

Input capacitance

Symbol

I^DSS

I^GSS

V^th

Testconditons

Min

Typ

Max

Unit

VDS=200V,VGS=0

VGS= 30V,VDS=0

VDS=10V,ID=1mA

VDS=10V,ID=10A

VGS=10V,ID=10A

2.0

4.0

Yfs

R^DS(on)

Ciss

C^oss

C^rss

t^on

105

2450

356

V^DS=25V,VGS=0,f=1MHZ

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

t^r

I^D=10A,VGS(on)=10V,RL=10

,VDD=100V

Turn-off delay time

t^off

184

Fall time

Total Gate Charge

Q^G

I^D=10A, VDD =100V, VGS = 10 V

Gate to Source Charge

Gate to Drain Charge

Q^GS

Q^GD

8.4

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