2SK3494

更新时间： 2024-09-23 21:55:27

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	74K
描述
N-channel enhancement mode MOSFET

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中文翻译

获取价格

数据手册

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2SK3494 数据手册

Power MOSFETs

2SK3494

N-channel enhancement mode MOSFET

■ Features

• Low on-resistance, low Q_g

• High avalanche resistance

Unit: mm

4.6 0.2

10.5 0.3

1.4 0.1

■ Applications

• For PDP

• For high-speed switching

1.4 0.1

2.5 0.2

0.8 0.1

2.54 0.3

0 to 0.3

■ Absolute Maximum Ratings T_C= 25°C

(10.2)

(8.9)

Parameter

Drain-source surrender voltage

Gate-source surrender voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Rating

Unit

250

1: Gate

2: Drain

3: Source

TO-220C-G1 Package

Peak drain current

I_DP

657

Avalanche energy capability ^*

Power dissipation

EAS

P_D

Marking Symbol: K3494

T_a= 25°C

1.4

Channel temperature

Storage temperature

T_ch

150

°C

T_stg

−55 to +150

Note) : L = 2.79 mH, I_L= 20 A, V_DD= 50 V, 1 pulse, T_a= 25°C

■ Electrical Characteristics T_C= 25°C 3°C

Parameter

Drain-source surrender voltage

Gate threshold voltage

Symbol

V_DSS

V_th

Conditions

Min

250

2.0

Typ

Max

Unit

I_D= 1 mA, V_GS= 0

V_DS= 10 V, I_D= 1 mA

V_DS= 200 V, V_GS= 0

4.0

Drain-source cutoff current

Gate-source cutoff current

Drain-source ON resistance

Forward transfer admittance

I_DSS

µA

mΩ

I_GSS

V_GS= 30 V, V_DS= 0

R_DS(on)V_GS= 10 V, I_D= 10 A

105

Y_fs

V_DS= 10 V, I_D= 10 A

Short-circuit forward transfer capacitance

(Common-source)

C_iss

V_DS= 25 V, V_GS= 0, f = 1 MHz

2450

Short-circuit output capacitance

(Common-source)

C_oss

C_rss

356

Reverse transfer capacitance

(Common-source)

Turn-on delay time

Rise time

t_d(on)

T_r

t_d(off)

t_f

V_DD≈ 100 V, I_D= 10 A

R_L= 10 Ω, V_GS= 10 V

Turn-off delay time

Fall time

184

Publication date: March 2004

SJG00037AED

12 3

中文翻译

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