Datasheet > 2SK3160

2SK3160

更新时间： 2024-09-15 22:52:55

品牌	Logo	应用领域
日立 - HITACHI		开关电源开关
页数	文件大小	规格书
9页	54K
描述
Silicon N Channel MOS FET High Speed Power Switching

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2SK3160 数据手册

2SK3160

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-751 (Z)

1st. Edition

February 1999

Features

•

Low on-resistance

R_DS= 130 mΩ typ.

•

High speed switching

4 V gate drive device can be driven from 5 V source

Outline

TO–220FM

1. Gate

2. Drain

3. Source

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
2SK3160-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3161	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3161	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3161(L)	HITACHI	获取价格	Power Field-Effect Transistor, 15A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Me
2SK3161(L)\|2SK3161(S)	ETC	获取价格
2SK3161(S)	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 15A I(D) \| TO-263AB
2SK3161(S)-(1)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
2SK3161-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3161L	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3161S	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching