生命周期: | Active | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.29 |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (ID): | 15 A |
最大漏源导通电阻: | 0.125 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 60 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK3161L | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3161S | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3161STL-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3161STR-E | RENESAS |
获取价格 |
Nch Single Power MOSFET 200V 15A 115mohm LDPAK(S)-(1)/TO-263 | |
2SK3162 | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3162 | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3162-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3163 | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3163 | HITACHI |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching | |
2SK3163-E | RENESAS |
获取价格 |
Silicon N Channel MOS FET High Speed Power Switching |