Datasheet > 2SK3176_09

2SK3176_09

更新时间： 2024-11-09 06:19:23

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器开关电机驱动 DC-DC转换器
页数	文件大小	规格书
6页	162K
描述
Switching Regulator, DC-DC Converter and Motor Drive Applications

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中文翻译

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数据手册

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2SK3176_09 数据手册

2SK3176

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS V)

2SK3176

Switching Regulator, DC-DC Converter and Motor Drive

Applications

Unit: mm

•

Low drain-source ON resistance: R

= 38 mΩ (typ.)

DS (ON)

High forward transfer admittance: |Y | = 30 S (typ.)

Low leakage current: I

= 100 mA (max) (V

= 200 V)

DSS

Enhancement-mode: V = 1.5 to 3.5 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain-source voltage

Symbol

Rating

Unit

200

±20

DSS

Drain-gate voltage (R

Gate-source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

1. GATE

Drain current

2. DRAIN (HEAT SINK)

3. SOURCE

Pulse (Note 1)

120

150

Drain power dissipation

(Tc = 25°C)

JEDEC

⎯

Single pulse avalanche energy

(Note 2)

925

JEITA

SC-65

Avalanche current

TOSHIBA

2-16C1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 4.6 g (typ.)

150

Storage temperature range

stg

−55 to 150

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2: = 50 V, T = 25°C (initial), L = 1.66 mH, R = 25 Ω, I = 30 A

Note 3: Repetitive rating: pulse width limited by maximum junction temperature.

Note 4: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change

in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic sensitive device.

Please handle with caution.

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

0.833 °C/W

50.0 °C/W

th (ch-c)

th (ch-a)

2009-09-29

12 3 4 5 6

中文翻译

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与2SK3176_09相关器件

型号	品牌	获取价格	描述	数据表
2SK3177	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3177	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3177-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK3179	TOSHIBA	获取价格	N CHANNEL SINGLE GATE MODULATION DOPE TYPE )UHF~SHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
2SK318	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 180V V(BR)DSS \| 4A I(D) \| SOT-119VAR
2SK319	HITACHI	获取价格	SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING)
2SK3192	PANASONIC	获取价格	Silicon N-channel power MOSFET
2SK3193	PANASONIC	获取价格	Power Field-Effect Transistor, 20A I(D), 350V, 0.15ohm, 1-Element, N-Channel, Silicon, Met
2SK3199	SANKEN	获取价格	External dimensions
2SK3199	ALLEGRO	获取价格	Power Field-Effect Transistor, TO-220AB, TO-220F, FM20, 3 PIN

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