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2SK302-Y

更新时间： 2024-11-26 12:36:03
品牌 Logo 应用领域
东芝 - TOSHIBA 射频放大器
页数 文件大小 规格书
7页 377K
描述
FM Tuner, VHF RF Amplifier Applications

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中文翻译

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2SK302-Y 技术参数

生命周期：Obsolete零件包装代码：SOT-23
包装说明：SMALL OUTLINE, R-PDSO-G3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.68
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (Abs) (ID)：0.03 A最大漏极电流 (ID)：0.03 A
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：0.05 pF
最高频带：VERY HIGH FREQUENCY BANDJEDEC-95代码：TO-236
JESD-30 代码：R-PDSO-G3元件数量：1
端子数量：3工作模式：DEPLETION MODE
最高工作温度：125 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.15 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子形式：GULL WING
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

2SK302-Y 数据手册

 浏览型号2SK302-Y的Datasheet PDF文件第2页浏览型号2SK302-Y的Datasheet PDF文件第3页浏览型号2SK302-Y的Datasheet PDF文件第4页浏览型号2SK302-Y的Datasheet PDF文件第5页浏览型号2SK302-Y的Datasheet PDF文件第6页浏览型号2SK302-Y的Datasheet PDF文件第7页 
2SK302  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
2SK302  
FM Tuner, VHF RF Amplifier Applications  
Unit: mm  
•
•
•
•
Low reverse transfer capacitance: C = 0.035 pF (typ.)  
rss  
Low noise figure: NF = 1.7dB (typ.)  
High power gain: G = 28dB (typ.)  
ps  
Recommend operation voltage: 5~15 V  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
V
V
20  
±5  
V
V
DS  
Gate-source voltage  
Drain current  
GS  
I
30  
mA  
mW  
°C  
D
Drain power dissipation  
Channel temperature  
Storage temperature  
P
150  
D
T
ch  
125  
T
stg  
−55~125  
°C  
JEDEC  
JEITA  
TO-236  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
―
TOSHIBA  
2-3F1C  
Weight: 0.012 g (typ.)  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
V
= 0 V, V  
= ±5 V  
⎯
⎯
⎯
±50  
nA  
V
GSS  
DS  
GS  
GS  
Drain-source voltage  
V
= −4 V, I = 100 μA  
20  
⎯
DSX  
D
I
DSS  
Drain current  
V
= 10 V, V  
= 0 V  
1.5  
⎯
14  
mA  
DS  
GS  
(Note)  
Gate-source cut-off voltage  
Forward transfer admittance  
Input capacitance  
V
V
V
= 10 V, I = 100 μA  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
10  
−2.5  
⎯
V
GS (OFF)  
⎪Y ⎪  
DS  
DS  
D
= 10 V, V  
= 10 V, V  
= 0 V, f = 1 kHz  
= 0 V, f = 1 MHz  
mS  
pF  
pF  
dB  
dB  
fs  
GS  
GS  
C
3.0  
⎯
iss  
rss  
PS  
V
DS  
Reverse transfer capacitance  
Power gain  
C
G
0.035 0.050  
28  
⎯
V
= 10 V, V  
= 0 V,  
DS  
GS  
f = 100 MHz (Figure 1)  
Noise figure  
NF  
1.7  
3.0  
Note: I  
classification O: 1.5~3.5 mA, Y: 3.0~7.0 mA, GR: 6.0~14.0 mA  
DSS  
1
2007-11-01  
1234567

中文翻译

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