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2SK2980ZZ-TL-E PDF预览

2SK2980ZZ-TL-E

更新时间: 2024-01-21 02:40:01
品牌 Logo 应用领域
瑞萨 - RENESAS 开关电源开关
页数 文件大小 规格书
7页 81K
描述
Silicon N Channel MOS FET High Speed Power Switching

2SK2980ZZ-TL-E 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SC-59A包装说明:LEAD FREE, SC-59A, MPAK-3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.65
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):1 A
最大漏极电流 (ID):1 A最大漏源导通电阻:0.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
JESD-609代码:e6元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.8 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:TIN BISMUTH端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK2980ZZ-TL-E 数据手册

 浏览型号2SK2980ZZ-TL-E的Datasheet PDF文件第1页浏览型号2SK2980ZZ-TL-E的Datasheet PDF文件第3页浏览型号2SK2980ZZ-TL-E的Datasheet PDF文件第4页浏览型号2SK2980ZZ-TL-E的Datasheet PDF文件第5页浏览型号2SK2980ZZ-TL-E的Datasheet PDF文件第6页浏览型号2SK2980ZZ-TL-E的Datasheet PDF文件第7页 
2SK2980  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Symbol  
VDSS  
Ratings  
Unit  
30  
V
V
VGSS  
+12  
–10  
V
Drain current  
ID  
1.0  
A
Note1  
Drain peak current  
ID(pulse)  
Pch Note2  
Tch  
4
0.8  
A
Channel dissipation  
W
°C  
°C  
Channel temperature  
Storage temperature  
Notes: 1. PW 10µs, duty cycle 1 %  
150  
Tstg  
–55 to +150  
2. Value at when using alumina ceramic board (12.5 x 20 x 0.7 mm)  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
V(BR)DSS  
V(BR)GSS  
Min  
30  
Typ  
Max  
Unit  
V
Test Conditions  
ID = 100 µA, VGS = 0  
Drain to source breakdown voltage  
Gate to source breakdown voltage  
+12  
–10  
V
IG = +100 µA, VDS = 0  
IG = –100 µA, VDS = 0  
VDS = 30 V, VGS = 0  
V
Zero gate voltage drain current  
Gate to source leak current  
Gate to source cutoff voltage  
IDSS  
IGSS  
1.0  
±5.0  
1.5  
0.28  
µA  
µA  
V
VGS = ±8 V, VDS = 0  
VGS(off)  
RDS(on)  
0.5  
ID = 10 µA, VDS = 5 V  
ID = 500 mA, VGS = 4 V Note3  
Static drain to source on state  
resistance  
0.2  
Static drain to source on state  
resistance  
RDS(on)  
0.3  
0.5  
ID = 500 mA, VGS = 2.5 V Note3  
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
|yfs|  
Ciss  
Coss  
Crss  
td(on)  
tr  
1.2  
2.0  
155  
75  
S
ID = 500 mA, VDS = 10 V Note3  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
VDS = 10 V, VGS = 0,  
f = 1 MHz  
35  
12  
VGS = 4 V, ID = 500 mA,  
RL = 20 Ω  
30  
Turn-off delay time  
Fall time  
td(off)  
tf  
35  
30  
Note: 3. Pulse test  
Rev.4.00 Sep 07, 2005 page 2 of 6  

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