Datasheet > 2SK2952_09

2SK2952_09

更新时间： 2024-11-15 07:32:27

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体稳压器晶体管场效应晶体管
页数	文件大小	规格书
6页	417K
描述
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)Chopper Regulator Applications

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中文翻译

获取价格

数据手册

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2SK2952_09 数据手册

2SK2952

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2952

Unit: mm

Chopper Regulator Applications

z Low drain−source ON resistance

z High forward transfer admittance

: R

= 0.4 Ω (typ.)

DS (ON)

: |Y | = 8.0 S (typ.)

z Low leakage current : I

= 100 μA (max) (V

= 400 V)

DSS

z Enhancement mode : V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain−source voltage

Symbol

Rating

Unit

400

±30

8.5

DSS

Drain−gate voltage (R

Gate−source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

JEDEC

JEITA

―

427

(Note 2)

SC-67

2-10R1B

Avalanche current

8.5

4.0

TOSHIBA

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 1.9 g (typ.)

150

Storage temperature range

−55 to 150

stg

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

3.125

62.5

°C / W

th (ch−c)

th (ch−a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V = 90 V, T = 25°C, L = 9.6 mH, R = 25 Ω, I = 8.5 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-09-29

12 3 4 5 6

中文翻译

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