Datasheet > 2SK2957(L)|2SK2957(S)

2SK2957(L)|2SK2957(S)

更新时间： 2024-10-13 23:20:39

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2SK2957(L)|2SK2957(S) 数据手册

2SK2957(L),2SK2957(S)

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-567D (Z)

5th. Edition

Jul. 1998

Features

•

Low on-resistance

R_DS(on)= 7mΩ typ.

•

4V gate drive devices.

High speed switching

Outline

LDPAK

1. Gate

2. Drain

3. Source

4. Drain

12 3 4 5 6 7...11

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型号	品牌	获取价格	描述	数据表
2SK2957(S)	RENESAS	获取价格	50A, 30V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3
2SK2957(S)-(1)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK2957(S)TL	HITACHI	获取价格	Power Field-Effect Transistor, 50A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met
2SK2957(S)TL	RENESAS	获取价格	50A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2957(S)TR	HITACHI	获取价格	Power Field-Effect Transistor, 50A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met
2SK2957(S)TR	RENESAS	获取价格	Power Field-Effect Transistor, 50A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met
2SK2957L	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2957L	RENESAS	获取价格	50A, 30V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3
2SK2957L-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2957S	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching