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2SK2958 PDF预览

2SK2958

更新时间: 2024-11-15 06:26:07
品牌 Logo 应用领域
瑞萨 - RENESAS 开关电源开关
页数 文件大小 规格书
8页 89K
描述
Silicon N Channel MOS FET High Speed Power Switching

2SK2958 数据手册

 浏览型号2SK2958的Datasheet PDF文件第2页浏览型号2SK2958的Datasheet PDF文件第3页浏览型号2SK2958的Datasheet PDF文件第4页浏览型号2SK2958的Datasheet PDF文件第5页浏览型号2SK2958的Datasheet PDF文件第6页浏览型号2SK2958的Datasheet PDF文件第7页 
2SK2958(L), 2SK2958(S)  
Silicon N Channel MOS FET  
High Speed Power Switching  
REJ03G1058-0400  
(Previous: ADE-208-568B)  
Rev.4.00  
Sep 07, 2005  
Features  
Low on-resistance  
RDS(on) = 5.5 mtyp.  
4 V gate drive devices.  
High speed switching  
Outline  
RENESAS Package code: PRSS0004AE-A  
(Package name: LDPAK(L))  
RENESAS Package code: PRSS0004AE-B  
(Package name: LDPAK(S)-(1))  
4
D
4
1. Gate  
G
2. Drain  
3. Source  
4. Drain  
1
2
3
1
2
3
S
Rev.4.00 Sep 07, 2005 page 1 of 7  

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2SK2958(S) HITACHI

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TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-263AB
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Power Field-Effect Transistor, 75A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Met
2SK2958(S)TR HITACHI

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暂无描述
2SK2958(S)TR RENESAS

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75A, 30V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2958L HITACHI

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Silicon N Channel MOS FET High Speed Power Switching