2SK2957

更新时间： 2024-11-15 06:19:39

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
8页	181K
描述
Silicon N Channel MOS FET High Speed Power Switching

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2SK2957 数据手册

2SK2957(L), 2SK2957(S)

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1057-0600

(Previous: ADE-208-567D)

Rev.6.00

Sep 07, 2005

Features

•

Low on-resistance

_DS(on)= 7 mΩ typ.

•

4 V gate drive devices.

High speed switching

Outline

RENESAS Package code: PRSS0004AE-A

(Package name: LDPAK(L))

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK(S)-(1))

1. Gate

2. Drain

3. Source

4. Drain

Rev.4.00 Sep 07, 2005 page 1 of 7

12 3 4 5 6 7 8

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型号	品牌	获取价格	描述	数据表
2SK2957(L)	RENESAS	获取价格	50A, 30V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3
2SK2957(L)\|2SK2957(S)	ETC	获取价格
2SK2957(S)	RENESAS	获取价格	50A, 30V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3
2SK2957(S)-(1)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK2957(S)TL	HITACHI	获取价格	Power Field-Effect Transistor, 50A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met
2SK2957(S)TL	RENESAS	获取价格	50A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2957(S)TR	HITACHI	获取价格	Power Field-Effect Transistor, 50A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met
2SK2957(S)TR	RENESAS	获取价格	Power Field-Effect Transistor, 50A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met
2SK2957L	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2957L	RENESAS	获取价格	50A, 30V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3