2SK2956

更新时间： 2024-10-14 06:25:39

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
7页	81K
描述
Silicon N Channel MOS FET High Speed Power Switching

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2SK2956 数据手册

2SK2956

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1056-0401

(Previous: ADE-208-566B)

Rev.4.01

Apr 27, 2006

Features

•

Low on-resistance

R_DS(on)= 7 mΩ typ.

4 V gate drive devices.

High speed switching

•

Outline

RENESAS Package code: PRSS0003AE-A

(Package name: TO-220C•FM)

1. Gate

2. Drain

3. Source

Rev.4.01 Apr 27, 2006 page 1 of 6

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
2SK2956-E	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2957	RENESAS	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2957	HITACHI	获取价格	Silicon N Channel MOS FET High Speed Power Switching
2SK2957(L)	RENESAS	获取价格	50A, 30V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3
2SK2957(L)\|2SK2957(S)	ETC	获取价格
2SK2957(S)	RENESAS	获取价格	50A, 30V, 0.018ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3
2SK2957(S)-(1)	HITACHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
2SK2957(S)TL	HITACHI	获取价格	Power Field-Effect Transistor, 50A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met
2SK2957(S)TL	RENESAS	获取价格	50A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2957(S)TR	HITACHI	获取价格	Power Field-Effect Transistor, 50A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met