Datasheet > 2SK2916_06

2SK2916_06

更新时间： 2024-11-02 04:26:27

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器转换器继电器电机 DC-DC转换器
页数	文件大小	规格书
6页	715K
描述
Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications

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中文翻译

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2SK2916_06 数据手册

2SK2916

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π–MOSV)

2SK2916

DC−DC Converter, Relay Drive and Motor Drive

Applications

Unit: mm

z Low drain–source ON resistance

z High forward transfer admittance

: R

= 0.35 Ω (typ.)

DS (ON)

: |Y | = 11 S (typ.)

z Low leakage current : I

= 100 μA (max) (V

= 500 V)

DSS

z Enhancement mode : V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain–source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain–gate voltage (R

Gate–source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

JEDEC

JEITA

—

795

(Note 2)

Avalanche current

TOSHIBA

2-16F1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 5.8 g (typ.)

150

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

1.56

41.6

Unit

Thermal resistance, channel to case

°C / W

th (ch–c)

th (ch–a)

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, starting T = 25°C, L = 6.9 mH, R = 25 Ω, I

= 14 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2006-11-06

12 3 4 5 6

中文翻译

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与2SK2916_06相关器件

型号	品牌	获取价格	描述	数据表
2SK2916_09	TOSHIBA	获取价格	DC−DC Converter, Relay Drive and Motor Drive Applications
2SK2917	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER
2SK2917(F)	TOSHIBA	获取价格	暂无描述
2SK2917(Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,18A I(D),TO-247VAR
2SK2917_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applic
2SK2917_09	TOSHIBA	获取价格	Chopper Regulator, DC−DC Converter and Motor Drive Applications
2SK2918-01	FUJI	获取价格	Power MOSFET
2SK2918-01MR	FUJI	获取价格	Power Field-Effect Transistor, 20A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Met
2SK2919	SANYO	获取价格	Ultrahigh-Speed Switching Applications
2SK291P	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 5MA I(DSS) \| TO-92

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