Datasheet > 2SK2917_09

2SK2917_09

更新时间： 2024-11-02 12:49:59

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器稳压器电机驱动 DC-DC转换器
页数	文件大小	规格书
6页	431K
描述
Chopper Regulator, DC−DC Converter and Motor Drive Applications

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中文翻译

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数据手册

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2SK2917_09 数据手册

2SK2917

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2917

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z Low drain–source ON resistance

z High forward transfer admittance

: R

= 0.21 Ω (typ.)

DS (ON)

: |Y | = 17 S (typ.)

z Low leakage current : I

= 100 μA (max) (V

= 500 V)

DSS

z Enhancement mode : V = 2.0 to 4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain–source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain–gate voltage (R

Gate–source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

Drain power dissipation (Ta = 25°C)

JEDEC

JEITA

―

Single pulse avalanche energy

915

(Note 2)

Avalanche current

TOSHIBA

2-16F1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 5.8 g (typ.)

150

Storage temperature range

−55 to 150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

Thermal resistance, channel to ambient

1.39

41.6

°C / W

th (ch–c)

th (ch–a)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 4.8 mH, R = 25 Ω, I = 18 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2009-09-29

12 3 4 5 6

中文翻译

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与2SK2917_09相关器件

型号	品牌	获取价格	描述	数据表
2SK2918-01	FUJI	获取价格	Power MOSFET
2SK2918-01MR	FUJI	获取价格	Power Field-Effect Transistor, 20A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Met
2SK2919	SANYO	获取价格	Ultrahigh-Speed Switching Applications
2SK291P	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 5MA I(DSS) \| TO-92
2SK291-P	HITACHI	获取价格	Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction
2SK291PRF	HITACHI	获取价格	Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction
2SK291Q	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 14MA I(DSS) \| TO-92
2SK291-Q	HITACHI	获取价格	Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction
2SK291-Q	RENESAS	获取价格	50mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK291R	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 20MA I(DSS) \| TO-92

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