5秒后页面跳转
捷配首页

Datasheet > 2SK2919
2SK2919 PDF预览

2SK2919

更新时间： 2024-01-16 09:30:29
品牌 Logo 应用领域
三洋 - SANYO 晶体开关晶体管脉冲
页数 文件大小 规格书
4页 109K
描述
Ultrahigh-Speed Switching Applications

阅读下载

中文翻译

获取价格

2SK2919 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PSSO-F2
针数：3Reach Compliance Code：unknown
风险等级：5.84Is Samacsys：N
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：600 V最大漏极电流 (Abs) (ID)：2 A
最大漏极电流 (ID)：2 A最大漏源导通电阻：4.3 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSSO-F2
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：35 W
最大脉冲漏极电流 (IDM)：8 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：FLAT端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

2SK2919 数据手册

 浏览型号2SK2919的Datasheet PDF文件第2页浏览型号2SK2919的Datasheet PDF文件第3页浏览型号2SK2919的Datasheet PDF文件第4页 
Ordering number:ENN6121  
N-Channel Silicon MOSFET  
2SK2919  
Ultrahigh-Speed Switching Applications  
Features  
Package Dimensions  
unit:mm  
· Low ON resistance.  
· Ultrahigh-speed switching.  
2128  
· On-chip high-speed diode (t =100ns).  
rr  
[2SK2919]  
8.2  
7.8  
6.2  
0.6  
3
1
2
0.3  
0.6  
1.0  
2.54  
1.0  
2.54  
5.08  
7.8  
10.0  
6.0  
1 : Gate  
2 : Source  
3 : Drain  
SANYO : ZP  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
600  
±30  
2
V
V
DSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
GSS  
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
8
A
DP  
P
D
Tch  
Tc=25°C  
35  
150  
W
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
600  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=10mA, V =0  
V
mA  
nA  
V
(BR)DSS  
D
GS  
I
V
V
V
V
V
V
V
V
=480V, V =0  
GS  
1.0  
DSS  
DS  
GS  
DS  
DS  
GS  
DS  
DS  
DS  
I
=±30V, V =0  
DS  
±100  
3.0  
GSS  
V
=10V, I =1mA  
D
2.0  
0.8  
GS(off)  
| yfs |  
Forward Transfer Admittance  
Static Drain-to-Source On-State Resistance  
Input Capacitance  
=10V, I =1A  
D
1.5  
S
Ω
R
=10V, I =1A  
D
3.2  
400  
55  
4.3  
DS(on)  
Ciss  
=20V, f=1MHz  
=20V, f=1MHz  
=20V, f=1MHz  
pF  
pF  
pF  
Output Capacitance  
Coss  
Crss  
Reverse Transfer Capacitance  
15  
Note ) Be careful in handling the 2SK2919 because it has no protection diode between Gate-to-Source.  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
21400TS (KOTO) TA-2283 No.6121–1/4  
1234

中文翻译

下载PDF

2SK2919 替代型号

型号 品牌 替代类型 描述 数据表
AOD2N60 AOS

功能相似

 2A, 600V N-Channel MOSFET

与2SK2919相关器件

型号 品牌 获取价格 描述 数据表
2SK291P ETC

获取价格

 		TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | TO-92
2SK291-P HITACHI

获取价格

 		Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction
2SK291PRF HITACHI

获取价格

 		Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction
2SK291Q ETC

获取价格

 		TRANSISTOR | JFET | N-CHANNEL | 14MA I(DSS) | TO-92
2SK291-Q HITACHI

获取价格

 		Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction
2SK291-Q RENESAS

获取价格

 		50mA, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK291R ETC

获取价格

 		TRANSISTOR | JFET | N-CHANNEL | 20MA I(DSS) | TO-92
2SK291RR HITACHI

获取价格

 		Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction
2SK291RRF HITACHI

获取价格

 		Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction
2SK291S ETC

获取价格

 		TRANSISTOR | JFET | N-CHANNEL | 28MA I(DSS) | TO-92

与2SK2919相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证