2SK2917(F)

更新时间： 2024-01-31 01:11:25

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东芝 - TOSHIBA		晶体转换器稳压器晶体管功率场效应晶体管开关脉冲电机驱动 DC-DC转换器局域网
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中文翻译

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数据手册

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2SK2917(F) 数据手册

2SK2917

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2917

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z Low drain–source ON resistance

z High forward transfer admittance

: R

= 0.21 Ω (typ.)

DS (ON)

: |Y | = 17 S (typ.)

z Low leakage current : I

= 100 μA (max) (V

= 500 V)

DSS

z Enhancement mode : V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain–source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain–gate voltage (R

Gate–source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

Drain power dissipation (Ta = 25°C)

JEDEC

JEITA

―

Single pulse avalanche energy

915

(Note 2)

Avalanche current

TOSHIBA

2-16F1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 5.8 g (typ.)

150

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

1.39

41.6

Unit

Thermal resistance, channel to case

°C / W

th (ch–c)

th (ch–a)

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 4.8 mH, R = 25 Ω, I = 18 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2006-11-06

12 3 4 5 6

中文翻译

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与2SK2917(F)相关器件

型号	品牌	获取价格	描述	数据表
2SK2917(Q)	TOSHIBA	获取价格	TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,18A I(D),TO-247VAR
2SK2917_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applic
2SK2917_09	TOSHIBA	获取价格	Chopper Regulator, DC−DC Converter and Motor Drive Applications
2SK2918-01	FUJI	获取价格	Power MOSFET
2SK2918-01MR	FUJI	获取价格	Power Field-Effect Transistor, 20A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Met
2SK2919	SANYO	获取价格	Ultrahigh-Speed Switching Applications
2SK291P	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 5MA I(DSS) \| TO-92
2SK291-P	HITACHI	获取价格	Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction
2SK291PRF	HITACHI	获取价格	Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction
2SK291Q	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 14MA I(DSS) \| TO-92

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