2SK2917(Q)

更新时间： 2024-11-02 13:00:59

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体转换器稳压器晶体管功率场效应晶体管开关脉冲电机驱动 DC-DC转换器局域网
页数	文件大小	规格书
6页	781K
描述
TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,18A I(D),TO-247VAR

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SK2917(Q) 技术参数

是否Rohs认证：	符合	生命周期：	Lifetime Buy
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.76	Is Samacsys：	N
配置：	Single	最大漏极电流 (Abs) (ID)：	18 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	90 W	子类别：	FET General Purpose Power
表面贴装：	NO	Base Number Matches：	1

2SK2917(Q) 数据手册

2SK2917

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

2SK2917

Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Unit: mm

z Low drain–source ON resistance

z High forward transfer admittance

: R

= 0.21 Ω (typ.)

DS (ON)

: |Y | = 17 S (typ.)

z Low leakage current : I

= 100 μA (max) (V

= 500 V)

DSS

z Enhancement mode : V = 2.0~4.0 V (V

= 10 V, I = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Drain–source voltage

Symbol

Rating

Unit

500

±30

DSS

Drain–gate voltage (R

Gate–source voltage

= 20 kΩ)

DGR

GSS

DC (Note 1)

Pulse (Note 1)

Drain current

Drain power dissipation (Ta = 25°C)

JEDEC

JEITA

―

Single pulse avalanche energy

915

(Note 2)

Avalanche current

TOSHIBA

2-16F1B

Repetitive avalanche energy (Note 3)

Channel temperature

°C

Weight: 5.8 g (typ.)

150

Storage temperature range

−55~150

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

1.39

41.6

Unit

Thermal resistance, channel to case

°C / W

th (ch–c)

th (ch–a)

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: = 90 V, T = 25°C (initial), L = 4.8 mH, R = 25 Ω, I = 18 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

2006-11-06

12 3 4 5 6

中文翻译

下载PDF

与2SK2917(Q)相关器件

型号	品牌	获取价格	描述	数据表
2SK2917_06	TOSHIBA	获取价格	Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applic
2SK2917_09	TOSHIBA	获取价格	Chopper Regulator, DC−DC Converter and Motor Drive Applications
2SK2918-01	FUJI	获取价格	Power MOSFET
2SK2918-01MR	FUJI	获取价格	Power Field-Effect Transistor, 20A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Met
2SK2919	SANYO	获取价格	Ultrahigh-Speed Switching Applications
2SK291P	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 5MA I(DSS) \| TO-92
2SK291-P	HITACHI	获取价格	Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction
2SK291PRF	HITACHI	获取价格	Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction
2SK291Q	ETC	获取价格	TRANSISTOR \| JFET \| N-CHANNEL \| 14MA I(DSS) \| TO-92
2SK291-Q	HITACHI	获取价格	Small Signal Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Silicon, Junction

与2SK2917(Q)相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

5
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

2
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

23
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

24

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK2917(Q)

2SK2917(Q) 技术参数

2SK2917(Q) 数据手册

与2SK2917(Q)相关器件

与2SK2917(Q)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SK2917(Q)

2SK2917(Q) 技术参数

2SK2917(Q) 数据手册

与2SK2917(Q)相关器件

与2SK2917(Q)相关文章

您还可以找

您在本页遇到什么问题？