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2SK2130 PDF预览

2SK2130

更新时间: 2024-11-17 22:52:51
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 46K
描述
Silicon N-Channel Power F-MOS FET

2SK2130 技术参数

生命周期:Obsolete零件包装代码:TO-220E
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownHTS代码:8541.29.00.95
风险等级:5.84雪崩能效等级(Eas):15 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:900 V最大漏极电流 (Abs) (ID):3 A
最大漏极电流 (ID):3 A最大漏源导通电阻:5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):50 W
最大脉冲漏极电流 (IDM):6 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SK2130 数据手册

 浏览型号2SK2130的Datasheet PDF文件第2页浏览型号2SK2130的Datasheet PDF文件第3页 
Power F-MOS FETs  
2SK2130  
Silicon N-Channel Power F-MOS FET  
Features  
Avalanche energy capacity guaranteed: EAS > 15mJ  
unit: mm  
VGSS = ±30V guaranteed  
High-speed switching: tf = 45ns  
No secondary breakdown  
4.6±0.2  
9.9±0.3  
2.9±0.2  
φ3.2±0.1  
Applications  
Contactless relay  
Diving circuit for a solenoid  
Driving circuit for a motor  
Control equipment  
2.6±0.1  
1.2±0.15  
0.7±0.1  
1.45±0.15  
Switching power supply  
0.75±0.1  
2.54±0.2  
5.08±0.4  
Absolute Maximum Ratings (TC = 25°C)  
Parameter  
Symbol  
Ratings  
Unit  
V
1
2 3  
7
Drain to Source breakdown voltage VDSS  
900  
1: Gate  
2: Drain  
3: Source  
Gate to Source voltage  
DC  
Pulse  
Avalanche energy capacity  
VGSS  
ID  
±30  
V
±3  
A
Drain current  
TO-220E Package  
IDP  
±6  
A
EAS*  
15  
mJ  
Allowable power  
dissipation  
TC = 25°C  
Ta = 25°C  
50  
PD  
W
2
Channel temperature  
Storage temperature  
Tch  
150  
°C  
°C  
Tstg  
55 to +150  
*
L = 5mH, IL = 2.45A, VDD = 50V, 1 pulse  
Electrical Characteristics (TC = 25°C)  
Parameter  
Symbol  
IDSS  
Conditions  
min  
typ  
max  
Unit  
mA  
µA  
V
Drain to Source cut-off current  
Gate to Source leakage current  
V
DS = 720V, VGS = 0  
0.1  
±1  
IGSS  
VGS = ±30V, VDS = 0  
ID = 1mA, VGS = 0  
VDS = 25V, ID = 1mA  
VGS = 10V, ID = 2A  
VDS = 25V, ID = 2A  
IDR = 3A, VGS = 0  
Drain to Source breakdown voltage VDSS  
900  
2
Gate threshold voltage  
Vth  
5
5
V
Drain to Source ON-resistance  
Forward transfer admittance  
Diode forward voltage  
RDS(on)  
| Yfs |  
VDSF  
3.8  
2.2  
1.5  
S
1.6  
V
Input capacitance (Common Source) Ciss  
Output capacitance (Common Source) Coss  
Reverse transfer capacitance (Common Source) Crss  
600  
90  
pF  
pF  
pF  
ns  
VDS = 20V, VGS = 0, f = 1MHz  
30  
Turn-on time (delay time)  
Rise time  
td(on)  
tr  
40  
VGS = 10V, ID = 2A  
40  
ns  
Fall time  
tf  
VDD = 200V, RL = 100Ω  
45  
ns  
Turn-off time (delay time)  
Thermal resistance between channel and case  
td(off)  
Rth(ch-c)  
100  
ns  
2.5  
°C/W  
1

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