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2SK2133

更新时间: 2024-11-09 07:32:11
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管
页数 文件大小 规格书
1页 46K
描述
MOS Field Effect Power Transistor

2SK2133 数据手册

  
SMD Type  
MOSFET  
MOS Field Effect Power Transistor  
2SK2133  
TO-263  
Unit: mm  
4.57+0.2  
Features  
-0.2  
1.27+0.1  
-0.1  
Low on-resistance  
RDS(on)=0.21 MAX.@VGS=10V,ID=8.0A  
Low Ciss Ciss=1090 pF TYP.  
High avalanche capabil  
1.27+0.1  
0.1max  
-0.1  
0.81+0.1  
-0.1  
2.54  
1 Gate  
2.54+0.2  
5.08+0.1  
0.4+0.2  
-0.2  
-0.2  
-0.1  
2 Drain  
3 Source  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to source voltage  
Symbol  
VDSS  
VGSS  
ID  
Rating  
Unit  
V
250  
Gate to source voltage  
V
30  
A
16  
64  
Drain current  
Idp *  
A
1.5  
W
W
Power dissipation TA=25  
TC=25  
PD  
75  
Channel temperature  
Storage temperature  
* PW 10 s,Duty Cycle 1%  
Tch  
150  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Drain cut-off current  
Gate leakage current  
Gate to source cutoff voltage  
Forward transfer admittance  
Drain to source on-state resistance  
Input capacitance  
Symbol  
IDSS  
IGSS  
VGS(off) VDS=10V,ID=1mA  
VDS=10V,ID=8.0A  
Testconditons  
Min  
Typ  
Max  
100  
10  
Unit  
A
VDS=250V,VGS=0  
VGS= 30V,VDS=0  
A
2.0  
4.0  
4.0  
V
S
Yfs  
RDS(on) VGS=10V,ID=8.0A  
Ciss  
0.2  
1090  
420  
80  
0.26  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
VDS=10V,VGS=0,f=1MHZ  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Coss  
Crss  
td(on)  
tr  
20  
Rise time  
40  
ID=8.0A,VGS(on)=10V,RL=18.75  
,RG=10 ,VDD=150V  
Turn-off delay time  
td(off)  
tf  
60  
Fall time  
20  
1
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