5秒后页面跳转
2SK2035(TE85L,F) PDF预览

2SK2035(TE85L,F)

更新时间: 2024-01-24 22:01:11
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
5页 282K
描述
TRANSISTOR 100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, SSM, 2-2H1B, 3 PIN, FET General Purpose Small Signal

2SK2035(TE85L,F) 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.36
配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):0.1 A最大漏极电流 (ID):0.1 A
最大漏源导通电阻:12 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.1 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK2035(TE85L,F) 数据手册

 浏览型号2SK2035(TE85L,F)的Datasheet PDF文件第2页浏览型号2SK2035(TE85L,F)的Datasheet PDF文件第3页浏览型号2SK2035(TE85L,F)的Datasheet PDF文件第4页浏览型号2SK2035(TE85L,F)的Datasheet PDF文件第5页 
2SK2035  
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type  
2SK2035  
High Speed Switching Applications  
Unit: mm  
Analog Switching Applications  
High input impedance.  
Low gate threshold voltage: V = 0.5~1.5 V  
th  
Excellent switching times: t = 0.16 μs (typ.)  
on  
t
off  
= 0.15 μs (typ.)  
Small package  
Enhancement-mode  
Marking  
Equivalent Circuit  
JEDEC  
JEITA  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Drain-source voltage  
Symbol  
Rating  
Unit  
TOSHIBA  
2-2H1B  
Weight: 2.4 mg (typ.)  
V
20  
10  
V
V
DS  
Gate-source voltage  
Drain current  
V
GSS  
I
100  
mA  
mW  
°C  
D
Drain power dissipation  
Channel temperature  
Storage temperature range  
P
100  
D
ch  
stg  
T
150  
T
55~150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note: This transistor is electrostatic sensitive device. Please handle with caushon.  
1
2007-11-01  

2SK2035(TE85L,F) 替代型号

型号 品牌 替代类型 描述 数据表
2SK2037 TOSHIBA

功能相似

TOSHIBA FIELD EFFECT TRANSISTOR SILICON CHANNEL TYPE
2SK2035 TOSHIBA

功能相似

N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCHING APPLICATIONS)
2SK2034 TOSHIBA

功能相似

N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)

与2SK2035(TE85L,F)相关器件

型号 品牌 获取价格 描述 数据表
2SK2035,LF(T TOSHIBA

获取价格

Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal
2SK2035_07 TOSHIBA

获取价格

N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCHING APPLICATIONS)
2SK2035TE85R TOSHIBA

获取价格

TRANSISTOR 100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Si
2SK2036 TOSHIBA

获取价格

N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCHING APPLICATIONS)
2SK2036(TE85L) TOSHIBA

获取价格

TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,100MA I(D),SC-59
2SK2036(TE85L,F) TOSHIBA

获取价格

TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,100MA I(D),SC-59
2SK2036_07 TOSHIBA

获取价格

N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCHING APPLICATIONS)
2SK2036TE85L TOSHIBA

获取价格

TRANSISTOR 100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, FET General Purpose
2SK2037 TOSHIBA

获取价格

TOSHIBA FIELD EFFECT TRANSISTOR SILICON CHANNEL TYPE
2SK2037(TE85L,F) TOSHIBA

获取价格

2SK2037(TE85L,F)