Datasheet > 2SK2036(TE85L)

2SK2036(TE85L)

更新时间： 2024-02-12 09:51:17

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	319K
描述
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,100MA I(D),SC-59

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技术参数
数据手册

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2SK2036(TE85L) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	0.1 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	0.2 W
子类别：	FET General Purpose Powers	表面贴装：	YES
Base Number Matches：	1

2SK2036(TE85L) 数据手册

2SK2036

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK2036

High Speed Switching Applications

Unit: mm

Analog Switching Applications

•

High input impedance.

Low gate threshold voltage: V = 0.5~1.5 V

Excellent switching times: t = 0.28 μs (typ.)

off

= 0.34 μs (typ.)

•

Small package

Enhancement-mode

Marking

Equivalent Circuit

JEDEC

JEITA

TO-236MOD

SC-59

Absolute Maximum Ratings (Ta = 25°C)

TOSHIBA

2-3F1F

Characteristics

Drain-source voltage

Symbol

Rating

Unit

Weight: 0.012 g (typ.)

Gate-source voltage

Drain current

GSS

100

°C

Drain power dissipation

Channel temperature

Storage temperature range

200

stg

150

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note: This transistor is electrostatic sensitive device. Please handle with caution.

2007-11-01

12 3 4 5

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