Datasheet > 2SK2035_07

2SK2035_07

更新时间： 2024-01-11 06:24:51

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
5页	542K
描述
N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCHING APPLICATIONS)

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中文翻译

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数据手册

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2SK2035_07 数据手册

2SK2035

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK2035

High Speed Switching Applications

Unit: mm

Analog Switching Applications

•

High input impedance.

Low gate threshold voltage: V = 0.5~1.5 V

Excellent switching times: t = 0.16 μs (typ.)

off

= 0.15 μs (typ.)

•

Small package

Enhancement-mode

Marking

Equivalent Circuit

Absolute Maximum Ratings (Ta = 25°C)

JEDEC

JEITA

―

Characteristics

Drain-source voltage

Symbol

Rating

Unit

TOSHIBA

2-2H1B

Weight: 2.4 mg (typ.)

Gate-source voltage

Drain current

GSS

100

°C

Drain power dissipation

Channel temperature

Storage temperature range

100

stg

150

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note: This transistor is electrostatic sensitive device. Please handle with caushon.

2007-11-01

12 3 4 5

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