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2SK2032 PDF预览

2SK2032

更新时间： 2024-09-25 23:20:39
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2SK2032 数据手册

 浏览型号2SK2032的Datasheet PDF文件第2页浏览型号2SK2032的Datasheet PDF文件第3页 
Power F-MOS FETs  
2SK2032  
Silicon N-Channel Power F-MOS FET  
■ Features  
● Avalanche energy capacity guaranteed: EAS > 200mJ  
unit: mm  
● VGSS = ±30V guaranteed  
● High-speed switching: tf = 90ns  
● No secondary breakdown  
15.0±0.3  
11.0±0.2  
5.0±0.2  
3.2  
φ3.2±0.1  
■ Applications  
● Contactless relay  
● Diving circuit for a solenoid  
● Driving circuit for a motor  
● Control equipment  
2.0±0.2  
2.0±0.1  
0.6±0.2  
1.1±0.1  
● Switching power supply  
5.45±0.3  
10.9±0.5  
2
■ Absolute Maximum Ratings (TC = 25°C)  
1
3
Parameter  
Symbol  
Ratings  
450  
±30  
±13  
±26  
200  
100  
3
Unit  
V
1: Gate  
2: Drain  
3: Source  
Drain to Source breakdown voltage VDSS  
Gate to Source voltage  
DC  
Pulse  
Avalanche energy capacity  
VGSS  
ID  
V
TOP-3 Full Pack Package (a)  
A
Drain current  
IDP  
A
1
EAS*  
mJ  
W
W
°C  
°C  
2
*
Allowable power  
dissipation  
TC = 25°C PD  
Ta = 25°C PD  
3
*
Channel temperature  
Storage temperature  
Tch  
150  
Tstg  
−55 to +150  
1
L = 5mH, IL = 9A, VDD = 50V, 1 pulse 2 TC = 25°C 3 Ta = 25°C (Without heat sink)  
*
*
*
■ Electrical Characteristics (TC = 25°C)  
Parameter  
Symbol  
IDSS  
Conditions  
VDS = 360V, VGS = 0  
VGS = ±30V, VDS = 0  
ID = 1mA, VGS = 0  
min  
typ  
max  
0.1  
Unit  
mA  
µA  
V
Drain to Source cut-off current  
Gate to Source leakage current  
IGSS  
±1  
Drain to Source breakdown voltage VDSS  
450  
2
Gate threshold voltage  
Vth  
VDS = 25V, ID = 1mA  
VGS = 10V, ID = 7A  
VDS = 25V, ID = 7A  
IDR = 13A, VGS = 0  
5
V
Drain to Source ON-resistance  
Forward transfer admittance  
Diode forward voltage  
RDS(on)  
| Yfs |  
VDSF  
0.34  
8
0.45  
Ω
5
S
−2  
V
Input capacitance (Common Source) Ciss  
Output capacitance (Common Source) Coss  
Reverse transfer capacitance (Common Source) Crss  
1700  
300  
120  
110  
90  
pF  
pF  
pF  
ns  
VDS = 20V, VGS = 0, f = 1MHz  
Turn-on time (delay time)  
Fall time  
td(on)  
tf  
td(off)  
Rth(ch-c)  
VGS = 10V, ID = 7A  
ns  
VDD = 150V, RL = 21.4Ω  
Turn-off time (delay time)  
Thermal resistance between channel and case  
220  
ns  
1.25  
°C/W  
1
123

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