Datasheet > 2SK2033

2SK2033

更新时间： 2024-02-11 05:53:13

品牌	Logo	应用领域
TYSEMI		栅极
页数	文件大小	规格书
1页	99K
描述
High input impedance. Low gate threshold voltage :Vth=0.5 to 1.5V Enhancement-Mode

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中文翻译

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技术参数
数据手册

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2SK2033 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.76	Is Samacsys：	N
配置：	Single	最大漏极电流 (Abs) (ID)：	0.1 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.2 W	子类别：	FET General Purpose Powers
表面贴装：	YES	Base Number Matches：	1

2SK2033 数据手册

SMD Type

MOSFET

Product specification

2SK2033

SOT-23

Unit: mm

Features

+0.1

-0.1

2.9

0.4

+0.1

-0.1

High input impedance.

Low gate threshold voltage :V^th=0.5 to 1.5V

Enhancement-Mode

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

1. Gate

2.Emitter

2. Source

3. Drain

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V^DSS

VGSS

I^D

Rating

Unit

100

Power dissipation

P^D

200

Channel temperature

Storage temperature

T^ch

150

T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Symbol

Testconditons

Min

Typ

Max

Unit

I^DSS

I^GSS

V^th

V^DS=10V,V^GS=0

Gate leakage current

Gate threshold voltage

Forward transfer admittance

Drain to source on-state resistance

Input capacitance

V^GS=20V,V^DS=0

V^DS=3V,I^D=0.1mA

V^DS=3V,I^D=10mA

0.5

1.5

Y^fs

R^DS(on)V^GS=2.5V,I^D=10mA

C^iss

8.5

3.3

9.3

0.16

0.15

V^DS=3V,V^GS=0,f=1MHZ

Output capacitance

C^oss

C^rss

Reverse transfer capacitance

Turn-on delay time

t^d(on)

t^d(off)

I^D=10mA,V^GS(on)=2.5V,V^DD=3V

Turn-off delay time

Marking

http://www.twtysemi.com

sales@twtysemi.com

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4008-318-123

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