2SK1860

更新时间： 2024-11-17 22:52:51

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
3页	78K
描述
Silicon N-Channel Junction FET

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中文翻译

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数据手册

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2SK1860 数据手册

Silicon Junction FETs (Small Signal)

2SK1860

Silicon N-Channel Junction FET

Unit: mm

For impedance conversion in low frequency

For electret capacitor microphone

0.40 –⁺0⁰.^.0¹5⁰

0.12 –⁺0⁰.^.0⁰1²

■ Features

• High mutual conductance g_m

• Low noise voltage of NV

■ Absolute Maximum Ratings T_a= 25°C

(0.95) (0.95)

1.9 0.1

(0.5)

2.9 0.2

Parameter

Symbol

V_DSO

V_DGO

I_DSO

I_DGO

I_GSO

P_D

Rating

Unit

10˚

Drain-source voltage (Gate open)

Drain-gate voltage (Souse open)

Drain-source current (Gate open)

Drain-gate current (Souse open)

Gate-source cutoff current (Drain open)

Power dissipation

°C

1: Drain

2: Source

3: Gate

Minit3-F1 Package

200

Marking Symbol: 1H

Operating ambient temperature

Storage temperature

T_opr

−20 to +80

−55 to +150

T_stg

°C

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Drain current

Symbol

I_D

Conditions

Min

Typ Max Unit

V_DS= 4.5 V, C_O= 10 pF，R_D= 2.2 kΩ

V_DS= 4.5 V, V_GS= 0

100

600

480

µA

Drain-sourse cutoff current

(G-S short)

I_DSS

Mutual conductance

Noise voltage

g_m

V_D= 4.5 V, V_GS= 0，f = 1 kHz

700 1600

µS

V_D= 4.5 V, R_D= 2.2 kΩ 1%

C_O= 10 pF, A-curve

µV

Voltage gain

G_v1

G_v2

G_v3

V_D= 4.5 V, R_D= 2.2 kΩ 1%

C_O= 10 pF, e_G= 10 mV，f = 1 kHz

−3

V_D= 12 V, R_D= 2.2 kΩ 1%

C_O= 10 pF, e_G= 10 mV，f = 1 kHz

3.3

V_D= 1.5 V, R_D= 2.2 kΩ 1%

−4.5 − 0.3

C_O= 10 pF, e_G= 10 mV，f = 1 kHz

∆G_{v ·}f^*

V_D= 4.5 V, R_D= 2.2 kΩ 1%

1.5

C_O= 10 pF, e_G= 10 mV，f = 1 kHz to 70 Hz

Voltage gain difference

∆G_{v2 −}G_v1

∆G_{v1 −}G_v3



3.5

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : ∆G_{v ·}f is assured for AQL0.065%. (the measurment method is used by source-grounded circuit.)

Publication date: August 2003

SJF00039AED

12 3

中文翻译

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