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2SK1875_07

更新时间： 2024-09-29 04:26:23
品牌 Logo 应用领域
东芝 - TOSHIBA 音频放大器
页数 文件大小 规格书
5页 533K
描述
N CHANNEL JUNCTION TYPE (HIGH, AM HIGH, AUDIO FREQUENCY AMPLIFIER APPLICATIONS)

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中文翻译

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2SK1875_07 数据手册

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2SK1875  
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type  
2SK1875  
High Frequency Amplifier Applications  
Unit: mm  
AM High Frequency Amplifier Applications  
Audio Frequency Amplifier Applications  
•
•
High |Y |: |Y | = 25 mS (typ.)  
fs fs  
Low C : C = 7.5 pF (typ.)  
iss iss  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Gate-drain voltage  
Symbol  
Rating  
Unit  
V
−20  
10  
V
GDS  
Gate current  
I
mA  
mW  
°C  
G
Drain power dissipation  
Junction temperature  
Storage temperature range  
P
100  
D
T
j
125  
T
stg  
−55~125  
°C  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
―
―
TOSHIBA  
2-2E1B  
Weight: 0.006 g (typ.)  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and  
estimated failure rate, etc).  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Gate leakage current  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
I
V
V
= −15 V, V  
= 0 V  
⎯
⎯
⎯
−1.0  
nA  
V
GSS  
GS  
DS  
DS  
Gate-drain breakdown voltage  
V
= 0 V, I = −100 μA  
−20  
⎯
(BR) GDS  
G
I
DSS  
(Note)  
Drain current  
V
= 5 V, V  
= 0 V  
6
⎯
32  
mA  
DS  
GS  
Gate-source cut-off voltage  
Forward transfer admittance  
Input capacitance  
V
V
V
V
V
= 5 V, I = 1 μA  
⎯
15  
⎯
⎯
⎯
25  
7.5  
2
−2.5  
⎯
V
GS (OFF)  
⎪Y ⎪  
DS  
DS  
DS  
DG  
D
= 5 V, V  
= 5 V, V  
= 0 V, f = 1 kHz  
= 0 V, f = 1 MHz  
mS  
pF  
pF  
fs  
GS  
GS  
C
10  
3
iss  
rss  
Reverse transfer capacitance  
C
= 5 V, I = 0 A, f = 1 MHz  
D
Note: I  
classification  
DSS  
GR: 6~12 mA, BL: 10~20 mA, V: 16~32 mA  
(G)  
) ...... I  
(L)  
(V)  
(
rank marking  
DSS  
1
2007-11-01  
12345

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