Datasheet > 2SK1867

2SK1867

更新时间： 2024-11-20 23:20:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
3页	48K
描述

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中文翻译

获取价格

数据手册

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2SK1867 数据手册

Power F-MOS FETs

2SK1867

Silicon N-Channel Power F-MOS FET

■ Features

● Avalanche energy capacity guaranteed: EAS > 15mJ

unit: mm

● V_GSS= ±30V guaranteed

● High-speed switching: t_f= 26ns

● No secondary breakdown

5.0±0.1

1.0

10.0±0.2

● Allowing to supply by the radial taping

90˚

■ Applications

● Contactless relay

1.2±0.1

C1.0

2.25±0.2

● Diving circuit for a solenoid

● Driving circuit for a motor

● Control equipment

0.65±0.1

1.05±0.1

0.35±0.1

0.55±0.1

● Switching power supply

■ Absolute Maximum Ratings (T_C= 25°C)

C1.0

Parameter

Symbol

Ratings

Unit

1: Gate

2: Drain

3: Source

2.5±0.2

Drain to Source breakdown voltage V_DSS

900

Gate to Source voltage

Pulse

Avalanche energy capacity

V_GSS

I_D

±30

MT4 Type Package

±2

Drain current

I_DP

±6

EAS^*

Allowable power

dissipation

T_C= 25°C

Ta = 25°C

P_D

Channel temperature

Storage temperature

T_ch

150

°C

T_stg

−55 to +150

L = 7.5mH, I_L= 2A, V_DD= 50V, 1 pulse

■ Electrical Characteristics (T_C= 25°C)

Parameter

Symbol

I_DSS

Conditions

V_DS= 900V, V_GS= 0

V_GS= ±30V, V_DS= 0

I_D= 1mA, V_GS= 0

V_DS= 25V, I_D= 1mA

V_GS= 10V, I_D= 2A

V_DS= 25V, I_D= 2A

I_DR= 2A, V_GS= 0

min

typ

max

0.1

Unit

µA

Drain to Source cut-off current

Gate to Source leakage current

I_GSS

±1

Drain to Source breakdown voltage V_DSS

900

Gate threshold voltage

V_th

Drain to Source ON-resistance

Forward transfer admittance

Diode forward voltage

R_DS(on)

| Y_fs|

V_DSF

3.8

4.85

Ω

1.5

−1.6

Input capacitance (Common Source) C_iss

Output capacitance (Common Source) C_oss

Reverse transfer capacitance (Common Source) C_rss

730

V_DS= 20V, V_GS= 0, f = 1MHz

Turn-on time

t_on

V_GS= 10V, I_D= 2A

Fall time

t_f

V_DD= 200V, R_L= 100Ω

Turn-off time (delay time)

Thermal resistance between channel and case

t_d(off)

R_th(ch-c)

105

8.33

°C/W

12 3

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与2SK1867相关器件

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