是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.9 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 150 V | 最大漏极电流 (Abs) (ID): | 4 A |
最大漏极电流 (ID): | 4 A | 最大漏源导通电阻: | 0.6 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 湿度敏感等级: | 2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 10 W | 最大功率耗散 (Abs): | 10 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 121 ns | 最大开启时间(吨): | 57 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK1862 | HITACHI |
获取价格 |
Silicon N-Channel MOS FET |
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2SK1862|2SK1863 | ETC |
获取价格 |
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2SK1862-E | RENESAS |
获取价格 |
3A, 450V, 2.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, SC-67, TO-220FM, 3 PIN |
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2SK1863 | HITACHI |
获取价格 |
Silicon N-Channel MOS FET |
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2SK1863-E | RENESAS |
获取价格 |
3A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, SC-67, TO-220FM, 3 PIN |
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2SK1864 | TOSHIBA |
获取价格 |
TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
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2SK1864TE24L | TOSHIBA |
获取价格 |
TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
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2SK1865 | TOSHIBA |
获取价格 |
TRANSISTOR 12 A, 500 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FL, TO-220FL, 3 PIN, |
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2SK1865(2-10S2B) | TOSHIBA |
获取价格 |
TRANSISTOR 12 A, 500 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220SM, 3 PIN, FET Genera |
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2SK1865SMTE24L | TOSHIBA |
获取价格 |
TRANSISTOR 12 A, 500 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220SM, TO-220SM, 3 PIN, |
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