是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.76 | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 500 V |
最大漏极电流 (Abs) (ID): | 3 A | 最大漏极电流 (ID): | 3 A |
最大漏源导通电阻: | 3 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 25 W |
最大脉冲漏极电流 (IDM): | 12 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK1864 | TOSHIBA |
获取价格 |
TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK1864TE24L | TOSHIBA |
获取价格 |
TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK1865 | TOSHIBA |
获取价格 |
TRANSISTOR 12 A, 500 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FL, TO-220FL, 3 PIN, | |
2SK1865(2-10S2B) | TOSHIBA |
获取价格 |
TRANSISTOR 12 A, 500 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220SM, 3 PIN, FET Genera | |
2SK1865SMTE24L | TOSHIBA |
获取价格 |
TRANSISTOR 12 A, 500 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220SM, TO-220SM, 3 PIN, | |
2SK1865TE24L | TOSHIBA |
获取价格 |
TRANSISTOR 12 A, 500 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
2SK1867 | ETC |
获取价格 |
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2SK1868 | PANASONIC |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal- | |
2SK1869 | HITACHI |
获取价格 |
Silicon N-Channel MOS FET | |
2SK1869(L) | RENESAS |
获取价格 |
0.8ohm, POWER, FET, LDPAK-3 |